Globally, the
combined market for IGBT (Insulated Gate Bipolar Transistor) and
super junction MOSFET (Metal-Oxide Semiconductor Field Effect
Transistor) was valued at USD 4,776.2 million in 2012 and is likely
to grow at a CAGR of 11.6% during the period 2013 – 2019. The
combined market for IGBT and super junction MOSFET is expected to
reach USD 10,100.0 million by 2019. Increasing demand for energy
efficiency, environment compatibility, flexibility, and cost and size
reduction are the emerging trends across the semiconductor industry
and have greatly influenced the trends in power semiconductor market.
IGBT and super junction MOSFETs offer significant improvement in
efficiency and better switching frequency. Further, IGBT are cost
effective while super junction MOSFETs offer highly compact design.
These factors are together driving the growth of the market for IGBTs
and super junction MOSFETs. Asia Pacific is expected to emerge as the
fastest growing regional market, followed by Europe, during the
forecast period 2013 to 2019. This growth in Asia Pacific region will
be led by China followed by Japan. The growing renewable energy
sector, heavy investment in high-speed rail and rising demand for
electric vehicles are the key factors propelling growth of the IGBT
and super junction MOSFET market in the region.
Both IGBT and super
junction MOSFETs come in discrete as well as module forms. Growth of
the discrete market is driven by increasing demand for consumer
electronic products while modules have found significant uptake in
photovoltaic inverters, and electric and hybrid electric vehicles
(EV/HEV). Key application areas for IGBT and super junction MOSFETs
include uninterrupted power supply (UPS), wind turbines, photovoltaic
(PV) inverter, rail traction, consumer applications, electric
vehicles/hybrid electric vehicles (EV/HEV), motor drives, industrial
applications, converters, adapters and chargers, lighting, and others
(servers, telecom and networking devices, etc.).. Super junction
MOSFETs have been emerging as a more suitable power semiconductor
for, converters, adapters and chargers, lighting, and other (servers,
telecom and networking devices, etc.) application areas and are
expected to find higher adoption in these segments as compared to
IGBT over the coming years. Among all application segments for IGBT
and super junction MOSFETs, industrial application was the single
largest segment by revenue in 2012. The industrial application sector
has seen high demand for energy efficient power semiconductor
products in recent years and this has propelled the uptake of IGBT in
this segment.
Key players in this
market include Mitsubishi Electric Corporation, Fairchild
Semiconductor International, Inc., Infineon Technologies AG,
STMicroelectronics N.V., ABB Ltd., Hitachi Power Semiconductor
Device, Ltd., Toshiba Corporation, Vishay Intertechnology, Inc., Fuji
Electric Co. Ltd., and Semikron, Inc., among others. Mitsubishi
Electric Corporation was as the market leader for IGBT in 2012. The
company had significant sales in the Asian market, particularly in
China and Japan. Infineon Technologies AG was the market leader in
2012 for super junction MOSFETs.
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